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| PD - 94287A HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5) IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number IRF5NJ3315 BVDSS 150V RDS(on) 0.08 ID 20A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight 20 12 80 75 0.6 20 165 12 7.5 3.0 -55 to 150 300 (for 5 s) 1.0 (Typical) Units A W W/C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 9/11/01 IRF5NJ3315 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 150 -- -- 2.0 12 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.18 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.08 4.0 -- 25 250 100 -100 95 11 47 25 60 75 60 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 12A VDS = VGS, ID = 250A VDS = 15V, IDS = 12A VDS = 150V ,VGS=0V VDS = 120V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 12A VDS = 120V VDD = 75V, ID = 12A, VGS =10V, RG = 5.1 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1370 300 160 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 20 80 1.3 260 1.7 Test Conditions A V ns C Tj = 25C, IS = 12A, VGS = 0V Tj = 25C, IF = 12A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 1.67 C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5NJ3315 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 4.5V 4.5V 1 0.1 20s PULSE WIDTH T = 25 C J 1 10 100 1 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C ID = 20A 2.0 1.5 10 1.0 0.5 1 4.0 15 V DS = 50V 20s PULSE WIDTH 8.0 9.0 5.0 6.0 7.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5NJ3315 2500 2000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 12A 16 VDS = 120V VDS = 75V VDS = 30V C, Capacitance (pF) 1500 Ciss 12 1000 C oss C rss 8 500 4 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 TJ = 150 C ISD , Reverse Drain Current (A) 10 TJ = 25 C 1 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 1ms 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) 10ms 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5NJ3315 20 V DS 16 RD VGS RG D.U.T. + I D , Drain Current (A) -V DD 12 VGS Pulse Width 1 s Duty Factor 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1 P DM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5NJ3315 EAS , Single Pulse Avalanche Energy (mJ) 400 1 5V 300 ID 5.4A 7.6A BOTTOM 12A TOP VD S L D R IV E R RG D .U .T. IA S 200 + V - DD A VGS 20V tp 0 .0 1 100 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 10V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Current Sampling Resistors Charge Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5NJ3315 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50 V, Starting TJ = 25C, L= 2.3mH Peak IAS = 12A, VGS = 10 V, RG= 25 ISD 12A, di/dt 120 A/s, Pulse width 300 s; Duty Cycle 2% VDD 150V, TJ 150C Case Outline and Dimensions -- SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/01 www.irf.com 7 |
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